High temperature mobility of CdTe

被引：17

作者：

Franc, J ^{[1
]}

Grill, R ^{[1
]}

Turjanska, L ^{[1
]}

Höschl, P ^{[1
]}

Belas, E ^{[1
]}

Moravec, P ^{[1
]}

机构：

[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.1321774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Hall mobility of electrons mu (H) is measured in CdTe in the temperature interval 450-1050 degreesC and defined Cd overpressure in near-intrinsic conditions. The strong decrease of mu (H) above 600 degreesC is reported. The effect is explained within a model of multivalley conduction where both electrons in Gamma (1c) minimum and in L-1c minima participate. The theoretical description is based on the solution of the Boltzmann transport equation within the relaxation time approximation including the polar and acoustic phonon intravalley and intervalley scatterings. The Gamma (1c) to L-1c separation DeltaE = 0.29-10(-4)T (eV) for the effective mass in the L valley m(L) = 0.35m(0) is found to best fit the experimental data. Such DeltaE is about four times smaller than it is predicted by first-principle calculations. (C) 2001 American Institute of Physics.

引用

页码：786 / 788

页数：3

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