Intersubband absorption at λ ∼ 2.1 μm in A-plane GaN/AlN multiple quantum wells

被引:22
作者
Gmachl, C [1 ]
Ng, HM [1 ]
机构
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
关键词
D O I
10.1049/el:20030381
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Intersubband optical absorption at lambdasimilar to2.1 mum wavelength in doped 17.5 Angstrom wide GaN quantum wells (QWs) with 51 Angstrom wide intermediate AlN barriers is reported. A similar to600 nm thick GaN template and 15 QWs have been grown by molecular beam epitaxy on R-plane sapphire substrate and display pure A-plane orientation. QWs with A-plane orientation are essentially free from spontaneous polarisation, which is expected to greatly simplify the design of GaN/Al(Ga)N devices employing intersubband transitions.
引用
收藏
页码:567 / 569
页数:3
相关论文
共 7 条
[1]   Spontaneous polarization and piezoelectric constants of III-V nitrides [J].
Bernardini, F ;
Fiorentini, V ;
Vanderbilt, D .
PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027
[2]   Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers [J].
Gmachl, C ;
Ng, HM ;
Chu, SNG ;
Cho, AY .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3722-3724
[3]   Intersubband absorption in degenerately doped GaN/AlxGa1-xN coupled double quantum wells [J].
Gmachl, C ;
Ng, HM ;
Cho, AY .
APPLIED PHYSICS LETTERS, 2001, 79 (11) :1590-1592
[4]   Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy [J].
Iizuka, N ;
Kaneko, K ;
Suzuki, N .
APPLIED PHYSICS LETTERS, 2002, 81 (10) :1803-1805
[5]   Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μm [J].
Kishino, K ;
Kikuchi, A ;
Kanazawa, H ;
Tachibana, T .
APPLIED PHYSICS LETTERS, 2002, 81 (07) :1234-1236
[6]   Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10(1)over-bar-2) sapphire substrates [J].
Ng, HM .
APPLIED PHYSICS LETTERS, 2002, 80 (23) :4369-4371
[7]   Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes [J].
Waltereit, P ;
Brandt, O ;
Trampert, A ;
Grahn, HT ;
Menniger, J ;
Ramsteiner, M ;
Reiche, M ;
Ploog, KH .
NATURE, 2000, 406 (6798) :865-868