Transport measurements across a tunable potential barrier in graphene

被引：587

作者：

Huard, B. ^{[1
]}

Sulpizio, J. A. ^{[1
]}

Stander, N. ^{[1
]}

Todd, K. ^{[1
]}

Yang, B. ^{[1
]}

Goldhaber-Gordon, D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 23期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.98.236803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The peculiar nature of electron scattering in graphene is among many exciting theoretical predictions for the physical properties of this material. To investigate electron scattering properties in a graphene plane, we have created a gate-tunable potential barrier within a single-layer graphene sheet. We report measurements of electrical transport across this structure as the tunable barrier potential is swept through a range of heights. When the barrier is sufficiently strong to form a bipolar junction (n-p-n or p-n-p) within the graphene sheet, the resistance across the barrier sharply increases. We compare these results to predictions for both diffusive and ballistic transport, as the barrier rises on a length scale comparable to the mean free path. Finally, we show how a magnetic field modifies transport across the barrier.

引用

页数：4

共 18 条

[11] Weak-localization magnetoresistance and valley symmetry in graphene [J].