Crosslinked PMMA as a high-resolution negative resist for electron beam lithography and applications for physics of low-dimensional structures

We present a novel technique which employs crosslinked PMMA as a high-resolution negative resist for electron beam lithography. The technique allows the patterning of submicrometre features in an insulating layer, thus simplifying the fabrication process of various multilayer devices. We demonstrate this by reference to specific devices and present simple experimental results which prove the usefulness of the technique.