Strain status of self-assembled InAs quantum dots

被引：22

作者：

Zhang, K

Heyn, C

Hansen, W

Schmidt, T

Falta, J

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[2] Univ Bremen, Inst Solid State Phys, D-28334 Bremen, Germany

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Grazing incidence x-ray diffraction experiments employing the asymmetric (202) Bragg diffraction have been performed to characterize self-assembled InAs quantum dots grown by molecular-beam epitaxy. We find that the strain is elastically relaxed with different components. The volume distribution of partially strained InAs inside islands is peaked at intermediate strain values. The fraction of both almost fully strained and totally relaxed InAs is found to be small. In addition, a small volume fraction of relaxed InxGa1-xAs is found. (C) 2000 American Institute of Physics. [S0003- 6951(00)02335-4].

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页码：1295 / 1297

页数：3

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