Performance and reliability of wafer-bonded AlGaInP /mirror/Si light-emitting diodes

被引：2

作者：

Horng, RH ^{[1
]}

Wuu, DS ^{[1
]}

Peng, WC ^{[1
]}

Huang, MF ^{[1
]}

Liu, PH ^{[1
]}

Seieh, CH ^{[1
]}

Lin, KC ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Inst Precis Engn, Taichung 402, Taiwan

来源：

OPTOELECTRONIC MATERIALS AND DEVICES II | 2000年 / 4078卷

关键词：

wafer bonding; light emitting diode; mirror substrate; absorb substrate; joule heating; reliability;

D O I：

10.1117/12.392180

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

AlGaInP light emitting diode (LED) with a mirror substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, free-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

引用

页码：507 / 513

页数：7

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