AlGaInP/AuBe/glass light-emitting diodes fabricated by wafer bonding technology

被引：19

作者：

Horng, RH ^{[1
]}

Wuu, DS

Wei, SC

Huang, MF

Chang, KH

Liu, PH

Lin, KC

机构：

[1] Da Yeh Univ, Inst Elect Engn, Chang Hwa 515, Taiwan

[2] Visual Photon Epitaxy Co, Tao Yuan 325, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 02期

关键词：

D O I：

10.1063/1.124303

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaInP/AuBe/glass light-emitting diode (LED) was fabricated by a wafer bonding technique. The AlGaInP LED was grown on a temporary GaAs substrate by metalorganic vapor phase epitaxy. By bonding the AuBe/glass substrate on top of epitaxial layers, the temporary GaAs substrate was removed. The luminance of this wafer-bonded device is about 3050 cd/m(2) (600 nm wavelength) at an operating current of 20 mA. It is about three times brighter than a conventional device with an absorbing GaAs substrate. This could be due to the fact that the AuBe/glass substrate serves as a reflective mirror, improving the light extraction efficiency. (C) 1999 American Institute of Physics. [S0003-6951(99)00928-6].

引用

页码：154 / 156

页数：3

共 6 条

[1] AlGaInP/GaP light-emitting diodes fabricated by wafer direct bonding technology [J].