HIGH-REFLECTANCE GAINP/GAAS DISTRIBUTED-BRAGG-REFLECTOR

被引：6

作者：

SAINTCRICQ, B

RUDRA, A

GANIERE, JD

ILEGEMS, M

机构：

[1] Institute for Micro and Optoelectornics, Ecole Polytechnique Fédérate de Lausanne

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 21期

关键词：

DISTRIBUTED BRAGG REFLECTOR LASERS; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19931234

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-reflectance GaInP/GaAs distributed Bragg reflector (DBR) was grown by chemical beam epitaxy (CBE). The mirror consists of 40 pairs of alternating layers and was designed for a centre wavelength of 980 nm, resulting in a total thickness of 5.8 mum. Highly stable growth conditions led to a maximum reflectance of 0.99 and to a variation in the centre wavelength of only 5 nm over the 2'' (50.8 mm) wafer. Transmission electron microscopy and X-ray diffraction measurements confirmed the vertical uniformity and the crystallographic quality of the sample.

引用

页码：1854 / 1855

页数：2

共 10 条

[1]

BORN M, 1970, PRINCIPLES OPTICS

[2] HIGH REFLECTIVITY 1.55-MU-M INP/INGAASP BRAGG MIRROR GROWN BY CHEMICAL BEAM EPITAXY [J].