GROWTH OF GAINAS(P) AND GAINASP/GAINAS MQW STRUCTURES BY CBE

被引：17

作者：

RUDRA, A ^{[1
]}

CARLIN, JF ^{[1
]}

RUTERANA, P ^{[1
]}

GAILHANOU, M ^{[1
]}

STAEHLI, JL ^{[1
]}

ILEGEMS, M ^{[1
]}

机构：

[1] ECOLE POLYTECH FED LAUSANNE,INST APPL PHYS,DEPT PHYS,CH-1015 LAUSANNE,SWITZERLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90414-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We discuss the growth of lattice matched GaInAs, GaInAsP and GaInAsP/GaInAs multiple quantum well structures for high speed laser applications. Optical cavities, including five 90 angstrom GaInAs quantum wells with GaInAsP barriers and waveguides showed a 4 K photoluminescence line width of 8.7 meV. Transmission electron microscopy and X-ray diffraction confirm the good control over the growth of these structures.

引用

页码：338 / 342

页数：5

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