INCORPORATION OF GROUP-III AND GROUP-V ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

被引:41
作者
BENCHIMOL, JL
LEROUX, G
THIBIERGE, H
DAGUET, C
ALEXANDRE, F
BRILLOUET, F
机构
[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, F-92220 Bagneux
关键词
D O I
10.1016/0022-0248(91)90590-2
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth of GaInAsP alloys by chemical beam epitaxy is investigated. The incorporation of group III and group V elements in the alloy and its dependence on growth temperature is studied over the whole range of compositions lattice-matched to InP. GaInAsP/InP double heterostructure lasers were fabricated showing threshold current densities of 2 kA/cm2.
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页码:978 / 981
页数:4
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