INCORPORATION OF GROUP-III AND GROUP-V ELEMENTS IN CHEMICAL BEAM EPITAXY OF GAINASP ALLOYS

被引：41

作者：

BENCHIMOL, JL

LEROUX, G

THIBIERGE, H

DAGUET, C

ALEXANDRE, F

BRILLOUET, F

机构：

[1] Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, F-92220 Bagneux

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90590-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth of GaInAsP alloys by chemical beam epitaxy is investigated. The incorporation of group III and group V elements in the alloy and its dependence on growth temperature is studied over the whole range of compositions lattice-matched to InP. GaInAsP/InP double heterostructure lasers were fabricated showing threshold current densities of 2 kA/cm2.

引用

页码：978 / 981

页数：4

共 12 条

[1] THE INFLUENCE OF GROWTH-CONDITIONS ON THE GROWTH-RATE AND COMPOSITION OF GAAS AND GAINAS ALLOYS GROWN BY CHEMICAL BEAM EPITAXY
ANDREWS, DA
DAVIES, GJ
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (06) : 3187 - 3189
[2] CHEMICAL BEAM EPITAXY OF INDIUM-PHOSPHIDE
BENCHIMOL, JL
ALAOUI, F
GAO, Y
LEROUX, G
RAO, EVK
ALEXANDRE, F
[J]. JOURNAL OF CRYSTAL GROWTH, 1990, 105 (1-4) : 135 - 142
[3] GOLDSTEIN L, 1988, I PHYS C SER, V91, P211
[4] HASONEN H, 1990, J CRYST GROWTH, V105, P101
[5] KAWAGUCHI Y, 1986, 18TH C SOL STAT DEV, P619
[6] SUBSTRATE-TEMPERATURE DEPENDENCE OF GAAS, GALNAS, AND GAALAS GROWTH-RATES IN METALORGANIC MOLECULAR-BEAM EPITAXY
KOBAYASHI, N
BENCHIMOL, JL
ALEXANDRE, F
GAO, Y
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (23) : 1907 - 1909
[7] GROWTH-MECHANISM OF IN1-XGAXP AND IN1-XALXP IN METALORGANIC MOLECULAR-BEAM EPITAXY
OZASA, K
YURI, M
TANAKA, S
MATSUNAMI, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) : 171 - 175
[8] GAS SOURCE MOLECULAR-BEAM EPITAXY OF INP, GAINAS AND GAINASP
PANISH, MB
[J]. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1986, 12 (1-4): : 1 - 28
[9] 1.2-1.6-MU-M GAXIN1-XASYP1-Y-INP DH LASERS GROWN BY LPMOCVD
RAZEGHI, M
DECREMOUX, B
DUCHEMIN, JP
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 389 - 397
[10] GALNASP/INP DOUBLE HETEROSTRUCTURE LASERS EMITTING AT 1.5-MU-M GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 63 - 65

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