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Wafer bonding of 75 mm diameter GaP to AlGaInP-GaP light-emitting diode wafers

被引：23
作者：
Tan, IH
Vanderwater, DA
Huang, JW
Hofler, GE
Kish, FA
Chen, EI
Ostentowski, TD
机构：
[1] Agilent Technol, Fiber Opt Commun Div, San Jose, CA 95151 USA
[2] Lumileds Lighting, San Jose, CA 95131 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2000年 / 29卷 / 02期
关键词：
wafer bonding; light emitting diodes (LEDs); absorbing substrate; transparent substrate;
D O I：
10.1007/s11664-000-0140-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The AlGaInP/GaP wafer-bonded transparent-substrate (TS) light-emitting diodes (LEDs) have been shown to exhibit luminous efficiencies exceeding many conventional lightning sources including 60 W incandescent sources. This paper will demonstrate the feasibility of scaling wafer bonding technology to 75 mm. diameter wafers and some of the unique challengesassociated with this scaling. The quality and uniformity of bonding were characterized via scanning acoustic microscopy, white light transmission measurements, full-wafer mapping of parametric performance, and operating life tests. High bonding yields over large areas facilitate low-cost, high-volume fabrication of TS AlGaInP/GaP LEDs, and thus, further enable these devices to compete with other lighting sources.
引用
收藏
页码：188 / 194
页数：7
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