Influence of potential fluctuation on optical and electrical properties in GaN

被引：43

作者：

Oh, E ^{[1
]}

Park, H ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 15期

关键词：

D O I：

10.1063/1.121203

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observed strong correlation between optical properties and transport properties in GaN. Both the intensity and the energy of near-band edge photoluminescence (PL) peak in GaN:Si vary with its mobility. Such behavior has been explained by the potential fluctuation associated with the inhomogeneous impurities or local defects, leading to the space-charge scattering of carriers and the redshift of the PL line. We also discuss the strain relaxation in GaN:Si. (C) 1998 American Institute of Physics.

引用

页码：1848 / 1850

页数：3

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