The microstructure of metalorganic-chemical-vapor-deposition GaN on sapphire

被引:35
作者
Hersee, SD
Ramer, JC
Malloy, KJ
机构
关键词
D O I
10.1557/S0883769400033406
中图分类号
T [工业技术];
学科分类号
08 ;
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[No abstract available]
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页码:45 / 51
页数:7
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共 18 条
[1]  
CHADDA S, 1994, MATER RES SOC SYMP P, V326, P353
[2]   THE ROLE OF THE LOW-TEMPERATURE BUFFER LAYER AND LAYER THICKNESS IN THE OPTIMIZATION OF OMVPE GROWTH OF GAN ON SAPPHIRE [J].
HERSEE, SD ;
RAMER, J ;
ZHENG, K ;
KRANENBERG, C ;
MALLOY, K ;
BANAS, M ;
GOORSKY, M .
JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) :1519-1523
[3]  
Heying B, 1996, APPL PHYS LETT, V68, P643, DOI 10.1063/1.116495
[4]   GROWTH-MECHANISM OF GAN GROWN ON SAPPHIRE WITH ALN BUFFER LAYER BY MOVPE [J].
HIRAMATSU, K ;
ITOH, S ;
AMANO, H ;
AKASAKI, I ;
KUWANO, N ;
SHIRAISHI, T ;
OKI, K .
JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :628-633
[5]  
HUFF H, 1983, SOLID STATE TECHNOL, P103
[6]   THEORY OF CONDUCTION IN POLYSILICON - DRIFT-DIFFUSION APPROACH IN CRYSTALLINE-AMORPHOUS-CRYSTALLINE SEMICONDUCTOR SYSTEM .1. SMALL-SIGNAL THEORY [J].
KIM, DM ;
KHONDKER, AN ;
AHMED, SS ;
SHAH, RR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (04) :480-493
[7]   SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES [J].
NAKAMURA, S ;
SENOH, M ;
IWASA, N ;
NAGAHAMA, S ;
YAMADA, T ;
MUKAI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (10B) :L1332-L1335
[8]   GAN GROWTH USING GAN BUFFER LAYER [J].
NAKAMURA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707
[9]  
NAKAMURA S, 1996, S N MAT RES SOC BOST
[10]  
Ohring M., 1992, MAT SCI THIN FILMS