Saturation of THz-frequency intraband absorption in InAs/GaAs quantum dot molecules

被引：24

作者：

Boucaud, P ^{[1
]}

Gill, KS

Williams, JB

Sherwin, MS

Schoenfeld, WV

Petroff, PM

机构：

[1] Univ Calif Santa Barbara, Quantum Inst, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 04期

关键词：

D O I：

10.1063/1.127027

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the far-infrared absorption in InAs/GaAs quantum dot molecules. The quantum dot molecules consist of two vertically coupled InAs self-assembled quantum dots separated by a GaAs barrier. The electronic coupling between the dot states results in an intraband absorption at THz frequencies. We show that this absorption can be bleached under high excitation intensity delivered by a free-electron laser. The saturation intensity is found to be on the order of 1 W cm(-2). The electron relaxation time T-1 is estimated from the saturation intensity. A lower limit for T-1 of the order of 30 ps is deduced. (C) 2000 American Institute of Physics. [S0003-6951(00)01130-X].

引用

页码：510 / 512

页数：3

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