The structure and residual stress in Si containing diamond-like carbon coating

被引：31

作者：

Wu, WJ ^{[1
]}

Hon, MH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn 62932, Tainan 70101, Taiwan

来源：

THIN SOLID FILMS | 1997年 / 307卷 / 1-2期

关键词：

diamond-like carbon; silicon; residual stress; structure;

D O I：

10.1016/S0040-6090(97)00251-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon (Si) containing diamond-like carbon films are deposited by RF plasma CVD with reactant gases of CH4, SiH4 and Ar. The effects of substrate temperature and RF power on film structure, residual stress and adhesion are studied. The tensile cracking failure mode for films on Corning 7059 glass shows full adherence properties. A structure model is proposed, and the residual stress of the films is compressive. The relation between the structure and the residual compressive stress is investigated. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 5

页数：5

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