Charge-injection barriers at realistic metal/organic interfaces: Metals become faceless

被引:47
作者
Grobosch, Mandy [1 ]
Knupfer, Martin [1 ]
机构
[1] IFW Dresden, D-01171 Dresden, Germany
关键词
D O I
10.1002/adma.200602435
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Interfaces between the organic semiconductor a-sexithiophene and sputter-cleaned (ideal) metals or contaminated (realistic) metals are investigated by a combined X-ray and UV photoemission spectroscopic study. The experimental results indicate a substantial impact of metal-surface contamination on the electronic properties of the interface. In particular, the hole-injection barrier is almost independent of the type of the underlying metal (see figure).
引用
收藏
页码:754 / +
页数:4
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