Charge-injection barriers at realistic metal/organic interfaces: Metals become faceless

被引：47

作者：

Grobosch, Mandy ^{[1
]}

Knupfer, Martin ^{[1
]}

机构：

[1] IFW Dresden, D-01171 Dresden, Germany

来源：

ADVANCED MATERIALS | 2007年 / 19卷 / 05期

关键词：

D O I：

10.1002/adma.200602435

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Interfaces between the organic semiconductor a-sexithiophene and sputter-cleaned (ideal) metals or contaminated (realistic) metals are investigated by a combined X-ray and UV photoemission spectroscopic study. The experimental results indicate a substantial impact of metal-surface contamination on the electronic properties of the interface. In particular, the hole-injection barrier is almost independent of the type of the underlying metal (see figure).

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页码：754 / +

页数：4

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