Parasitic effects and long term stability of InP-based HEMTs

被引：6

作者：

Meneghesso, G

Luise, R

Buttari, D

Chini, A

Yokoyama, H

Suemitsu, T

Zanoni, E

机构：

[1] Univ Padua, Dipartimento Elettron & Informat, I-35131 Padua, Italy

[2] Univ Padua, INFM, I-35131 Padua, Italy

[3] NTT Corp, Photon Labs, Atsugi, Kanagawa 24301, Japan

来源：

MICROELECTRONICS RELIABILITY | 2000年 / 40卷 / 8-10期

关键词：

D O I：

10.1016/S0026-2714(00)00168-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A study of InP based HEMTs implemented with different process options will be reported. It will be demonstrated that devices with an InP etch stopper layer or with a narrow lateral gate recess region do not present any kink effect, neither any transconductance frequency dispersion, g(m)(f) and a stable behavior with respect to hot electron aging is observed. The opposite occurs in devices without the InP etch stopper layer and a wide lateral gate recess region. The data presented confirm the effectiveness of an InP passivating layer in improving the reliability of advanced InP-HEMTs, and point out at the free InAlAs surface as responsible for the observed instabilities (kink effects, g(m)(f) dispersion). (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：1715 / 1720

页数：6

共 15 条

[1] Reliability study on InAlAs/InGaAs HEMTs with an InP recess-etch stopper and refractory gate metal [J].