Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures

被引：61

作者：

Jin, SR

Zheng, YL

Li, AZ

机构：

[1] State Key Lab. Funct. Mat. for Info., Shanghai Institute of Metallurgy, Chinese Academy of Sciences

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 08期

关键词：

D O I：

10.1063/1.365689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The photoluminescence (PL) intensity of free excitons in a GaInAsSb/GaAlAsSb single quantum well structure is investigated as a function of excitation intensity and lattice temperature. The relationship between PL intensity of free excitons and excitation intensity as well as lattice temperature was developed for the quantitative descriptions of the experimental data. (C) 1997 American Institute of Physics.

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收藏

页码：3870 / 3873

页数：4

相关论文

共 23 条

[1] EXCITON DYNAMICS IN INXGA1-XAS/GAAS QUANTUM-WELL HETEROSTRUCTURES - COMPETITION BETWEEN CAPTURE AND THERMAL EMISSION [J].

BACHER, G ;

HARTMANN, C ;

SCHWEIZER, H ;

HELD, T ;

MAHLER, G ;

NICKEL, H .

PHYSICAL REVIEW B, 1993, 47 (15) :9545-9555

[2]

BASTARD I, 1991, WAVE MECH APPL SEMIC, P269

[3] CALCULATION OF CARRIER CAPTURE TIME OF A QUANTUM-WELL IN GRADED-INDEX SEPARATE-CONFINEMENT HETEROSTRUCTURES [J].

BRUM, JA ;

WEIL, T ;

NAGLE, J ;

VINTER, B .

PHYSICAL REVIEW B, 1986, 34 (04) :2381-2384

[4] ELECTRON-CAPTURE PROCESSES IN OPTICALLY-EXCITED IN0.53GA0.47AS/INP QUANTUM WELLS [J].

CEBULLA, U ;

BACHER, G ;

FORCHEL, A ;

SCHMITZ, D ;

JURGENSEN, H ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1989, 55 (10) :933-935

[5]

CHEMLA DS, 1984, IEEE J QUANTUM ELECT, V20, P165

[6] THERMAL IONIZATION OF EXCITONS IN GAAS/ALGAAS QUANTUM-WELL STRUCTURES [J].

COLOCCI, M ;

GURIOLI, M ;

VINATTIERI, A .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) :2809-2812

[7] CAPTURE OF PHOTOEXCITED CARRIERS BY A LASER STRUCTURE [J].

DEVEAUD, B ;

CLEROT, F ;

REGRENY, A ;

FUJIWARA, K ;

MITSUNAGA, K ;

OHTA, J .

APPLIED PHYSICS LETTERS, 1989, 55 (25) :2646-2648

[8] CAPTURE OF ELECTRONS AND HOLES IN QUANTUM WELLS [J].

DEVEAUD, B ;

SHAH, J ;

DAMEN, TC ;

TSANG, WT .

APPLIED PHYSICS LETTERS, 1988, 52 (22) :1886-1888

[9]

FOUGUET JE, 1985, APPL PHYS LETT, V46, P280

[10] RECOMBINATION DYNAMICS IN GAAS/ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].

FOUQUET, JE ;

BURNHAM, RD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1799-1810