Effect of Joule heating in current-driven domain wall motion

被引:148
作者
Yamaguchi, A
Nasu, S
Tanigawa, H
Ono, T
Miyake, K
Mibu, K
Shinjo, T
机构
[1] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan
[2] Kyoto Univ, Inst Chem Res, Uji, Kyoto 6110011, Japan
[3] Tohoku Univ, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
[4] Kyoto Univ, Res Ctr Low Temp & Mat Sci, Uji, Kyoto 6110011, Japan
[5] Int Inst Adv Studies, Kizu 6190225, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.1847714
中图分类号
O59 [应用物理学];
学科分类号
摘要
It was found that high current density needed for the current-driven domain wall motion results in the Joule heating of the sample. The sample temperature, when the current-driven domain wall motion occurred, was estimated by measuring the sample resistance during the application of a pulsed current. The sample temperature was 750 K for the threshold current density of 6.7x10(11) A/m(2) in a 10-nm-thick Ni81Fe19 wire with a width of 240 nm on thermally oxidized silicon substrate. The temperature was raised to 830 K for the current density of 7.5x10(11) A/m(2), which is very close to the Curie temperature of bulk Ni81Fe19. When the current density exceeded 7.5x10(11) A/m(2), an appearance of a multidomain structure in the wire was observed by magnetic force microscopy, suggesting that the sample temperature exceeded the Curie temperature. (C) 2005 American Institute of Physics.
引用
收藏
页码:012511 / 1
页数:3
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