Dipole scattering in polarization induced III-V nitride two-dimensional electron gases

被引：35

作者：

Jena, D ^{[1
]}

Gossard, AC ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2000年 / 88卷 / 08期

关键词：

D O I：

10.1063/1.1311832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Unusually large spontaneous and piezoelectric fields in the III-V nitrides have led to the making of an entirely new class of two-dimensional electron gas. Fluctuation from a perfectly periodic binary structure in highly polar semiconductor alloys present the same physical situation as a random distribution of microscopic dipoles. The excess dipole distribution in the barrier layers is evaluated by a method similar to the virtual crystal approximation. It is shown that the mobility of electrons in the two-dimensional electron gas formed in highly polar heterostructures is intrinsically limited by scattering from such dipoles. (C) 2000 American Institute of Physics. [S0021-8979(00)02121-6].

引用

页码：4734 / 4738

页数：5

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