Electric force microscopy as a probe of active and passive elements of integrated circuits

被引：4

作者：

Karpov, I

Belcher, RW

Linn, JH

机构：

[1] Harris Semicond Inc, Analyt Sci, Palm Bay, FL 32905 USA

[2] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA

来源：

APPLIED SURFACE SCIENCE | 1998年 / 125卷 / 3-4期

关键词：

D O I：

10.1016/S0169-4332(97)00456-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Integrated circuit (IC) device structures and metal interconnects have been investigated with atomic force microscopy (AFM). Tapping mode AFM was used to acquire topographical data. The focus of this paper is on the electrostatic interaction between a metallized AFM tip and the sample surface in noncontact mode. By varying the tip potential to minimize the electrostatic force between the tip and the surface, we were able to quantitatively probe voltages in metal interconnects and planar resistors, as well as image pn junctions and trapped charges. (C) 1998 Elsevier Science BV.

引用

页码：332 / 338

页数：7