Control of MBE surface step-edge kinetics to make an atomically smooth quantum well

被引：7

作者：

Yoshita, M

Oh, JW

Akiyama, H

Pfeiffer, LN

West, KW

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

[2] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

atomic force microscopy; surface morphology; molecular beam epitaxy; quantum wells; gallium arsenide;

D O I：

10.1016/S0022-0248(02)02372-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

By cleaved-edge overgrowth with molecular beam epitaxy and high-temperature growth-interrupt anneal, molecular step-edge kinetics on the epitaxial surface grown on the cleave has been successfully controlled. A (1 1 0) GaAs QW exactly integral 30-monolayers thick with atomically smooth heterointerfaces has been demonstrated, which shows spatially uniform and spectrally sharp photoluminescence. Precise measures of stable characteristic-shaped islands or pits on the surfaces fractional monolayers thick and successful modeling of these shapes suggest that the driving force towards the atomically smooth (1 1 0) surface relies on the stability of Ga and As atoms on the step edges. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：62 / 67

页数：6

相关论文

共 16 条

[1] SHARP-LINE PHOTOLUMINESCENCE OF EXCITONS LOCALIZED AT GAAS/ALGAAS QUANTUM-WELL INHOMOGENEITIES [J].

BRUNNER, K ;

ABSTREITER, G ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

APPLIED PHYSICS LETTERS, 1994, 64 (24) :3320-3322

[2] SHARP-LINE PHOTOLUMINESCENCE AND 2-PHOTON ABSORPTION OF ZERO-DIMENSIONAL BIEXCITONS IN A GAAS/ALGAAS STRUCTURE [J].

BRUNNER, K ;

ABSTREITER, G ;

BOHM, G ;

TRANKLE, G ;

WEIMANN, G .

PHYSICAL REVIEW LETTERS, 1994, 73 (08) :1138-1141

[3] Homogeneous linewidths in the optical spectrum of a single gallium arsenide quantum dot [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

SCIENCE, 1996, 273 (5271) :87-90

[4] Fine structure splitting in the optical spectra of single GaAs quantum dots [J].

Gammon, D ;

Snow, ES ;

Shanabrook, BV ;

Katzer, DS ;

Park, D .

PHYSICAL REVIEW LETTERS, 1996, 76 (16) :3005-3008

[5] (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T-shaped quantum wires [J].

Gislason, H ;

Sorensen, CB ;

Hvam, JM .

APPLIED PHYSICS LETTERS, 1996, 69 (06) :800-802

[6] Metamorphosis of a quantum wire into quantum dots [J].

Hasen, J ;

Pfeiffer, LN ;

Pinczuk, A ;

He, S ;

West, KW ;

Dennis, BS .

NATURE, 1997, 390 (6655) :54-57

[7] NEAR-FIELD SPECTROSCOPY OF THE QUANTUM CONSTITUENTS OF A LUMINESCENT SYSTEM [J].

HESS, HF ;

BETZIG, E ;

HARRIS, TD ;

PFEIFFER, LN ;

WEST, KW .

SCIENCE, 1994, 264 (5166) :1740-1745

[8] FORMATION OF A HIGH-QUALITY 2-DIMENSIONAL ELECTRON-GAS ON CLEAVED GAAS [J].

PFEIFFER, L ;

WEST, KW ;

STORMER, HL ;

EISENSTEIN, JP ;

BALDWIN, KW ;

GERSHONI, D ;

SPECTOR, J .

APPLIED PHYSICS LETTERS, 1990, 56 (17) :1697-1699

[9] Is the arsenic incorporation kinetics important when growing GaAs(001), (110), and (111)A films? [J].

Tok, ES ;

Jones, TS ;

Neave, JH ;

Zhang, J ;

Joyce, BA .

APPLIED PHYSICS LETTERS, 1997, 71 (22) :3278-3280

[10] Imaging spectroscopy of two-dimensional excitons in a narrow GaAs/AlGaAs quantum well [J].

Wu, Q ;

Grober, RD ;

Gammon, D ;

Katzer, DS .

PHYSICAL REVIEW LETTERS, 1999, 83 (13) :2652-2655