Ionization of sputtered material in a planar magnetron discharge

被引:101
作者
Christou, C [1 ]
Barber, ZH [1 ]
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2000年 / 18卷 / 06期
关键词
D O I
10.1116/1.1312370
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Emission spectra in the visible and near ultraviolet have been recorded for the magnetron sputtering of titanium by argon at pressures between 0.5 and 100 Pa. Intense emission lines from both atomic and ionic material were detected, and comparison of line intensities yielded an ionization fraction of over 10% and an electron temperature of the order of 1 eV for the sputtered material. The ionization fraction decreased with increasing magnetron power, and an optimal operating pressure was found for maximum ion content of the sputtered flux. Scaling laws of emission line intensity with magnetron power indicated the incomplete thermalization of sputtered metal with the sputtering plasma, and spatially resolved measurements of ionization profiles were used to investigate the transport and collisional ionization of sputtered material. Penning ionization of sputtered titanium by metastable argon was found to be the dominant ionization process, and the effect of diffusion of metastable argon was noted. Control of ion content in sputtered fluxes is of interest for the deposition of thin films and fur metallization of semiconductors. (C) 2000 American Vacuum Society. [S0734-2101(00)02306-X].
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收藏
页码:2897 / 2907
页数:11
相关论文
共 40 条
[1]   ANGULAR-DISTRIBUTION OF PARTICLES SPUTTERED FROM CU, PT AND GE TARGETS BY KEV AR+ ION-BOMBARDMENT [J].
ANDERSEN, HH ;
STENUM, B ;
SORENSEN, T ;
WHITLOW, HJ .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (03) :459-465
[2]   AN INTERFEROMETRIC INVESTIGATION OF THE THERMALIZATION OF COPPER ATOMS IN A MAGNETRON SPUTTERING DISCHARGE [J].
BALL, LT ;
FALCONER, IS ;
MCKENZIE, DR ;
SMELT, JM .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) :720-724
[3]  
CHAPIN JS, 1974, RES DEV, V25, P37
[4]   The control of film stress using ionised magnetron sputter deposition [J].
Chiu, KF ;
Barber, ZH ;
Somekh, RE .
THIN SOLID FILMS, 1999, 343 :39-42
[5]   PLASMA DIAGNOSTICS OF AN RF-SPUTTERING GLOW DISCHARGE [J].
COBURN, JW ;
KAY, E .
APPLIED PHYSICS LETTERS, 1971, 18 (10) :435-&
[6]   EMISSION-SPECTROSCOPY DIAGNOSTICS OF A MAGNETRON SPUTTER DISCHARGE [J].
COOK, JG ;
DAS, SR .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (05) :1846-1851
[7]   Quenching of electron temperature and electron density in ionized physical vapor deposition [J].
Dickson, M ;
Qian, F ;
Hopwood, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (02) :340-344
[8]   Axially-resolved study of highly ionized physical vapor deposition [J].
Dickson, M ;
Hopwood, J .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04) :2307-2312
[9]  
GRIEM HR, 1964, PLASMA SPECTRSCOPY
[10]   AXIAL DISTRIBUTION OF OPTICAL-EMISSION IN A PLANAR MAGNETRON DISCHARGE [J].
GU, L ;
LIEBERMAN, MA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (05) :2960-2964