Green-light-emitting ZnSe nanowires fabricated via vapor phase growth

被引:138
作者
Xiang, B
Zhang, HZ
Li, GH
Yang, FH
Su, FH
Wang, RM
Xu, J
Lu, GW
Sun, XC
Zhao, Q
Yu, DP [1 ]
机构
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Sch Phys, Electron Microscopy Lab, Beijing 100871, Peoples R China
[3] Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
关键词
D O I
10.1063/1.1573334
中图分类号
O59 [应用物理学];
学科分类号
摘要
Stoichiometric ZnSe nanowires have been synthesized through a vapor phase reaction of zinc and selenium powder on the (100) silicon substrate coated with a gold film of 2 nm in thickness. The microstructures and the chemical compositions of the as-grown nanowires have been investigated by means of electron microscopy, the energy dispersive spectroscopy, and Raman spectroscopy. The results reveal that the as-grown materials consist of ZnSe nanowires with diameters ranging from 5 to 50 nm. Photoluminescence of the sample demonstrates a strong green emission from room temperature down to 10 K. This is attributed to the recombination of electrons from conduction band to the medium deep Au acceptors. (C) 2003 American Institute of Physics.
引用
收藏
页码:3330 / 3332
页数:3
相关论文
共 21 条
[1]   OPTICAL-PROPERTIES OF ZNSE DOPED WITH AG AND AU [J].
DEAN, PJ ;
FITZPATRICK, BJ ;
BHARGAVA, RN .
PHYSICAL REVIEW B, 1982, 26 (04) :2016-2035
[2]   Nonvolatile memory and programmable logic from molecule-gated nanowires [J].
Duan, XF ;
Huang, Y ;
Lieber, CM .
NANO LETTERS, 2002, 2 (05) :487-490
[3]  
Duan XF, 2000, ADV MATER, V12, P298, DOI 10.1002/(SICI)1521-4095(200002)12:4<298::AID-ADMA298>3.0.CO
[4]  
2-Y
[5]   Stable avalanche-photodiode operation of ZnSe-based p+-n structure blue-ultraviolet photodetectors [J].
Ishikura, H ;
Abe, T ;
Fukuda, N ;
Kasada, H ;
Ando, K .
APPLIED PHYSICS LETTERS, 2000, 76 (08) :1069-1071
[6]   Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates [J].
Katayama, K ;
Yao, H ;
Nakanishi, F ;
Doi, H ;
Saegusa, A ;
Okuda, N ;
Yamada, T ;
Matsubara, H ;
Irikura, M ;
Matsuoka, T ;
Takebe, T ;
Nishine, S ;
Shirakawa, T .
APPLIED PHYSICS LETTERS, 1998, 73 (01) :102-104
[7]   Ultraviolet-emitting ZnO nanowires synthesized by a physical vapor deposition approach [J].
Kong, YC ;
Yu, DP ;
Zhang, B ;
Fang, W ;
Feng, SQ .
APPLIED PHYSICS LETTERS, 2001, 78 (04) :407-409
[8]   Quasiphase matched second harmonic generation in ZnSe waveguide structures modulated by focused ion beam implantation [J].
Kuhnelt, M ;
Leichtner, T ;
Kaiser, S ;
Hahn, B ;
Wagner, HP ;
Eisert, D ;
Bacher, G ;
Forchel, A .
APPLIED PHYSICS LETTERS, 1998, 73 (05) :584-586
[9]   Atomic force microscopy studies of ZnSe self-organized dots fabricated on ZnS/GaP [J].
Ma, ZH ;
Sun, WD ;
Sou, IK ;
Wong, GKL .
APPLIED PHYSICS LETTERS, 1998, 73 (10) :1340-1342
[10]   Temperature dependence of the direct gaps of ZnSe and Zn0.56Cd0.44Se [J].
Malikova, L ;
Krystek, W ;
Pollak, FH ;
Dai, N ;
Cavus, A ;
Tamargo, MC .
PHYSICAL REVIEW B, 1996, 54 (03) :1819-1824