Zinc-blende ZnS under pressure: predicted electronic properties

被引：50

作者：

Benmakhlouf, F

Bechiri, A

Bouarissa, N ^{[1
]}

机构：

[1] Univ Tebessa, Dept Phys, Tebessa 12002, Algeria

[2] Univ Msila, Dept Phys, Msila 28000, Algeria

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(03)00009-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the pseudopotential scheme, the hydrostatic pressure dependence of the electronic properties has been predicted for zinc-blende ZnS. The material of interest is found to exhibit features of both direct and indirect band-gap semiconductor depending on the applied pressure. Detailed plots of the valence charge distribution along the [111] direction and in the (110) plane at different pressures are also presented and discussed. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：1335 / 1338

页数：4