Zinc-blende ZnS under pressure: predicted electronic properties

被引：50

作者：

Benmakhlouf, F

Bechiri, A

Bouarissa, N ^{[1
]}

机构：

[1] Univ Tebessa, Dept Phys, Tebessa 12002, Algeria

[2] Univ Msila, Dept Phys, Msila 28000, Algeria

来源：

SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期

关键词：

D O I：

10.1016/S0038-1101(03)00009-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on the pseudopotential scheme, the hydrostatic pressure dependence of the electronic properties has been predicted for zinc-blende ZnS. The material of interest is found to exhibit features of both direct and indirect band-gap semiconductor depending on the applied pressure. Detailed plots of the valence charge distribution along the [111] direction and in the (110) plane at different pressures are also presented and discussed. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：1335 / 1338

页数：4

相关论文

共 21 条

[11] ABINITIO HIGH-PRESSURE STRUCTURAL AND ELECTRONIC-PROPERTIES OF ZNS [J].

JAFFE, JE ;

PANDEY, R ;

SEEL, MJ .

PHYSICAL REVIEW B, 1993, 47 (11) :6299-6303

[12] Composition and temperature dependence of electron band structure in ZnSe1-xSx [J].

Kassali, K ;

Bouarissa, N .

MATERIALS CHEMISTRY AND PHYSICS, 2002, 76 (03) :255-261

[13] PHOTOLUMINESCENCE STUDIES OF P-TYPE AND N-TYPE ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY [J].

KINTO, H ;

YAGI, M ;

TANIGASHIRA, K ;

YAMADA, T ;

UCHIKI, H ;

IIDA, S .

JOURNAL OF CRYSTAL GROWTH, 1992, 117 (1-4) :348-352

[14]

Kobayasi T., 1993, B COLL MED SCI TOHOK, V2, P7

[15] ROLE OF D-ELECTRONS IN THE ZINCBLENDE SEMICONDUCTORS ZNS, ZNSE, AND ZNTE [J].

LEE, GD ;

LEE, MH ;

IHM, J .

PHYSICAL REVIEW B, 1995, 52 (03) :1459-1462

[16] The energy gap E-g of Zn1-xMgxSySe1-y epitaxial layers as a function of composition and temperature [J].

Lunz, U ;

Schumacher, C ;

Nurnberger, J ;

Schull, K ;

Gerhard, A ;

Schussler, U ;

Jobst, B ;

Faschinger, W ;

Landwehr, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1997, 12 (08) :970-973

[17]

Madelung O, 1996, SEMICONDUCTORS BASIC

[18] The compressibility of media under extreme pressures [J].

Murnaghan, FD .

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 1944, 30 :244-247

[19] PRESSURE-DEPENDENCE OF ENERGY GAPS AND REFRACTIVE-INDEXES OF TETRAHEDRALLY BONDED SEMICONDUCTORS [J].

TSAY, YF ;

MITRA, SS ;

BENDOW, B .

PHYSICAL REVIEW B, 1974, 10 (04) :1476-1481

[20] CUBIC ZNS UNDER PRESSURE - OPTICAL-ABSORPTION EDGE, PHASE-TRANSITION, AND CALCULATED EQUATION OF STATE [J].

VES, S ;

SCHWARZ, U ;

CHRISTENSEN, NE ;

SYASSEN, K ;

CARDONA, M .

PHYSICAL REVIEW B, 1990, 42 (14) :9113-9118