Current crowding and its effect on 1/f noise and third harmonic distortion -: a case study for quality assessment of resistors

被引:33
作者
Vandamme, EP
Vandamme, LKJ
机构
[1] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 Eindhoven, Netherlands
[2] IMEC VZW, STDI, CMOS, B-3001 Heverlee, Belgium
关键词
D O I
10.1016/S0026-2714(00)00091-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we discuss the impact of current crowding on 1/f noise generation and third harmonic distortion in semiconductor devices. We propose a model for the 1/f noise in resistors taking into account the effect of current crowding. This model can be applied to devices that suffer from current crowding due to e.g., multiple spot contacts on homogeneous samples, inter-grain contacts in polysilicon or poly SiGe resistors, grain contacts in thick-film resistors or non-homogeneous thin films and nano particle contacts. The model shows that current crowding has a much larger effect on the 1/f noise of a device than on its resistance. Current crowding at multi-spot contacts also increases the local temperature due to the small value of thermal time constants of multi-spot contacts and increases the contact resistance. This results in third harmonic distortion. Our model explains qualitatively that an increase in 1/f noise goes hand in hand with an increase in third harmonic distortion. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1847 / 1853
页数:7
相关论文
共 16 条
[1]   1/f noise in polycrystalline SiGe analyzed in terms of mobility fluctuations [J].
Chen, XY ;
Salm, C ;
Hooge, FN ;
Woerlee, PH .
SOLID-STATE ELECTRONICS, 1999, 43 (09) :1715-1724
[2]  
DAROLD M, 1999, P 29 EUR SOL STAT DE, P648
[3]  
Holm R., 1967, Electric Contacts: Theory and Applications, DOI DOI 10.1007/978-3-662-06688-1
[4]  
HOOGE FN, 1981, REP PROG PHYS, V44, P497
[5]  
Hueber B. F., 1972, Proceedings of the 6th International Symposium on Electric Contact Phenomena, P31
[6]  
Kohlrausch F, 1900, ANN PHYS-BERLIN, V1, P132
[7]  
MAY EJP, 1980, P 2 INT S 1 F NOIS M, P491
[8]   Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines [J].
Vandamme, EP ;
De Wolf, I ;
Lauwers, A ;
Vandamme, LKJ .
MICROELECTRONICS AND RELIABILITY, 1998, 38 (6-8) :925-929
[9]   1/F NOISE AND ITS COHERENCE AS A DIAGNOSTIC-TOOL FOR QUALITY ASSESSMENT OF POTENTIOMETERS [J].
VANDAMME, EP ;
ANDAMME, LKJ .
IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY PART A, 1994, 17 (03) :436-445
[10]   IMPACT OF SILICIDATION ON THE EXCESS NOISE BEHAVIOR OF MOS-TRANSISTORS [J].
VANDAMME, EP ;
VANDAMME, LKJ ;
CLAEYS, C ;
SIMOEN, E ;
SCHREUTELKAMP, RJ .
SOLID-STATE ELECTRONICS, 1995, 38 (11) :1893-1897