Low frequency noise analysis as a diagnostic tool to assess the quality of 0.25μm Ti-silicided poly lines

被引:4
作者
Vandamme, EP
De Wolf, I
Lauwers, A
Vandamme, LKJ
机构
[1] IMEC, B-3001 Louvain, Belgium
[2] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands
来源
MICROELECTRONICS AND RELIABILITY | 1998年 / 38卷 / 6-8期
关键词
D O I
10.1016/S0026-2714(98)00114-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, de and low frequency noise measurement results on Ti-silicided poly lines are presented and analysed. Besides Raman scattering [1], low frequency noise analysis gives additional information on the presence and the spatial distribution of the high resistive C49 phase in the silicide line. The low frequency noise is strongly dependent on whether or not the distribution of the C49 phase is uniform or spotted-like. The experimental results agree with our model for a uniform C49 phase distribution over the silicided line. A spotted-like distribution of the C49 phase, which causes non-uniform current densities, can not explain the observed noise behaviour. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:925 / 929
页数:5
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