A reliability study of titanium silicide lines using micro-Raman spectroscopy and emission microscopy

被引：5

作者：

DeWolf, I

Howard, DJ

Rasras, M

Lauwers, A

Maex, K

Groeseneken, G

Maes, HE

机构：

[1] IMEC, B-3001 Leuven

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 10-11期

关键词：

D O I：

10.1016/S0026-2714(97)00117-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Micro-Raman spectroscopy and emission microscopy are used to study the crystallographic phase of 0.25 mu m wide TiSi2 lines. It is demonstrated for the first time that emission microscopy allows very fast, simple, non-destructive mapping of the local phase of TiSi2. The results show that there is a direct correlation between the resistance variation of these lines and the local occurrence of the high resistivity C49 phase of TiSi2 in the lines. (C) 1997 Elsevier Science Ltd.

引用

页码：1591 / 1594

页数：4

共 5 条

[1] Local identification and mapping of the C49 and C54 titanium phases in submicron structures by micro-Raman spectroscopy [J].

DeWolf, I ;

Howard, DJ ;

Lauwers, A ;

Maex, K ;

Maes, HE .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2262-2264

[2]

HEYEONGTAG J, 1992, J APPL PHYS, V71, P4269

[3] QUANTITATIVE EMISSION MICROSCOPY [J].

KOLZER, J ;

BOIT, C ;

DALLMANN, A ;

DEBOY, G ;

OTTO, J ;

WEINMANN, D .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (11) :R23-R41

[4] IN-SITU X-RAY-DIFFRACTION ANALYSIS OF THE C49-C54 TITANIUM SILICIDE PHASE-TRANSFORMATION IN NARROW LINES [J].

ROY, RA ;

CLEVENGER, LA ;

CABRAL, C ;

SAENGER, KL ;

BRAUER, S ;

JORDANSWEET, J ;

BUCCHIGNANO, J ;

STEPHENSON, GB ;

MORALES, G ;

LUDWIG, KF .

APPLIED PHYSICS LETTERS, 1995, 66 (14) :1732-1734

[5] MULTIPHONON RAMAN-SPECTRUM OF SILICON [J].

TEMPLE, PA ;

HATHAWAY, CE .

PHYSICAL REVIEW B, 1973, 7 (08) :3685-3697

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