NOISE AS A DIAGNOSTIC-TOOL FOR QUALITY AND RELIABILITY OF ELECTRONIC DEVICES

被引:436
作者
VANDAMME, LKJ
机构
[1] Eindhoven University of Technology, Department of Electrical Engineering
关键词
D O I
10.1109/16.333839
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experimental facts about noise are presented which help us to understand the correlation between noise in a device and its reliability. The main advantages of noise measurements are that the tests are less destructive, faster and more sensitive than dc measurements after accelerated life tests. The following topics will be addressed: 1) The kind of noise spectra in view of reliability diagnostics such as thermal noise, shot noise, the typical poor-device indicators like burst noise and generation-recombination noise and the 1/f2 and 1/f noise. 2) Why conduction noise is a quality indicator, 3) the quality of electrical contacts and vias, 4) electromigration damage, 5) the reliability in diode type devices like solar cell, laser diode, and bipolar transistors, and 6) the series resistance in modern short channel MESFET, MODFET, and MOST devices.
引用
收藏
页码:2176 / 2187
页数:12
相关论文
共 83 条
[1]   PRIMARY PHOTOCURRENT ANALYSIS BY NOISE MEASUREMENTS IN N+P-PI-P+ AVALANCHE PHOTO-DIODES [J].
ALABEDRA, R ;
MAILLE, C ;
RATSIRA, D ;
LECOY, G .
REVUE DE PHYSIQUE APPLIQUEE, 1980, 15 (07) :1201-1208
[2]  
AMBROZY A, 1990, 10TH INT C NOIS PHYS
[3]  
AMERASEKERA EA, 1987, FAILURE MECHANISMS S
[4]  
BLALOCK TV, 1981, NBS SPEC PUBL, V614, P260
[5]  
CELIKBUTLER Z, 1993, AIP C P, V285, P200
[6]  
CHAN TM, 1990, 10TH INT C NOIS PHYS, P515
[7]  
CHEN TM, 1993, AIP C P, V285, P17
[8]   LOW-FREQUENCY NOISE IN P+-GAAS WITH NONALLOYED CONTACTS [J].
CHEN, XY ;
LEYS, MR ;
RAGAY, FW .
ELECTRONICS LETTERS, 1994, 30 (07) :600-601
[9]  
CHICCA S, 1993, EUROPE S RELIABILITY, P347
[10]  
DAMICO A, 1986, 8TH INT C NOIS PHYS