Synthesis of well-aligned ZnO nanowires by simple physical vapor deposition on c-oriented ZnO thin films without catalysts or additives -: art. no. 024108

被引:198
作者
Wang, LS
Zhang, XZ [1 ]
Zhao, SQ
Zhou, GY
Zhou, YL
Qi, JJ
机构
[1] Tsinghua Univ, Dept Mat Sci & Engn, Dept Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
[3] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China
关键词
D O I
10.1063/1.1851607
中图分类号
O59 [应用物理学];
学科分类号
摘要
Well-aligned ZnO nanowires were synthesized by simple physical vapor deposition using c-oriented ZnO thin films as substrates without catalysts or additives. The synthesized ZnO nanowires have two typical average diameters: 60 nm in majority and 120 nm in minority. They are about 4 mum in length and well aligned along the normal direction of the substrate. Most of the synthesized ZnO nanowires are single crystalline in a hexagonal structure and grow along the [001] direction. The c-oriented ZnO thin films control the growth direction. Photoluminescence spectrum was measured showing a single strong ultraviolet emission (380 nm). Such result indicates that the ZnO nanowire arrays can be applied to excellent optoelectronic devices. (C) 2005 American Institute of Physics.
引用
收藏
页码:024108 / 1
页数:3
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