A common-gate switched, 0.9W class-E power amplifier with 41% PAE in 0.25μm CMOS

被引：12

作者：

Yoo, C ^{[1
]}

Huang, QT ^{[1
]}

机构：

[1] Samsung Elect, Yongin, South Korea

来源：

2000 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS | 2000年

关键词：

D O I：

10.1109/VLSIC.2000.852850

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A power amplifier (PA) has been implemented in a standard 0.25 mu m CMOS technology and shown to deliver 0.9W output power to 50 Omega load with 41% power added efficiency (PAE) from a 1.8V supply. The PA employs the class-E configuration with finite DC-feed inductance and common-gate switching scheme to achieve high efficiency and not to stress the active devices.

引用

页码：56 / 57

页数：2

共 5 条

[1] The impact of scaling down to deep submicron on CMOS RF circuits [J].