Preparation and the magnetic property of ZnMnO thin films on (0001) ZnO single crystal substrate

被引：13

作者：

Masuko, K. ^{[1
]}

Ashida, A. ^{[1
]}

Yoshimura, T. ^{[1
]}

Fujimura, N. ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Naka Ku, Sakai, Osaka 5998531, Japan

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期

关键词：

diluted magnetic semiconductor; Mn-doped Zno; pseudomorphic growth;

D O I：

10.1016/j.jmmm.2006.10.1024

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To understand the intrinsic magnetic nature of ZnMnO thin films without the influence of the clustering and segregating Mn ions due to the formation of misfit dislocations and staking faults, ZnO films with the Mn concentration up to 10 at% were prepared on (000 1) ZnO single-crystal substrate by pulsed laser deposition (PLD) method. The lattice constant along the c-axis of the ZnMnO films linearly increases with increasing the Mn concentration, and that along a-axis does not change from that of ZnO substrate showing the pseudomorphic growth of the ZnMnO films. The intrinsic magnetization behavior could be obtained by using these ZnMnO films. The ZnMnO films up to 10 at% Mn exhibit typical paramagnetic nature at 1.85K including the antiferromagnetic interaction of Mn-O-Mn superexchange. (C) 2006 Elsevier B.V. All rights reserved.

引用

页码：E711 / E713

页数：3

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