Combined electron- and ion-beam imprinter and its applications

被引：12

作者：

Ji, Q ^{[1
]}

Ji, L

Chen, Y

Leung, KN

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[2] Harvard Univ, Ctr Imaging & Mesoscale Struct, Cambridge, MA 02138 USA

[3] Univ Calif Berkeley, Dept Nucl Engn, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 20期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.1812367

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A combined electron- and ion-beam system employing a double-chamber plasma source and a single accelerator column has been developed to provide focused electron and positive-ion beams simultaneously, with no need for a separate electron source or accelerating column for sample neutralization. The self-aligned ion and electron beams can be used to micromachine and image a variety of materials, both conducting and insulating. Together with an ion-beam imprinting scheme, the combined electron/ion beam system is compact and provides low-cost, high-throughput, and large-area micromachining. (C) 2004 American Institute of Physics.

引用

页码：4618 / 4620

页数：3

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