Time-of-flight measurements of carrier drift mobilities in polymorphous silicon

被引：27

作者：

Brinza, M

Adriaenssens, GJ

Cabarrocas, PRI

机构：

[1] Univ Louvain, Halfgeleiderfys, B-3001 Louvain, Belgium

[2] Ecole Polytech, Phys Interfaces & Couches Minces Lab, CNRS, UMR 7647, F-91128 Palaiseau, France

来源：

THIN SOLID FILMS | 2003年 / 427卷 / 1-2期

关键词：

polymorphous silicon; drift mobility; transient photoconductivity;

D O I：

10.1016/S0040-6090(02)01157-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Time-of-flight transient photoconductivity measurements in polymorphous silicon samples reveal a 10-fold increase of the room temperature hole drift mobility up to 1.5 X 10(-2) cm(2) V-1 s(-1) when the deposition total gas pressure is raised from 133 to 232 Pa. An accompanying increase of the electron mobility is much more modest. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：123 / 126

页数：4

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