POST-TRANSIT TIME-OF-FLIGHT CURRENTS AS A PROBE OF THE DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：98

作者：

SEYNHAEVE, GF ^{[1
]}

BARCLAY, RP ^{[1
]}

ADRIAENSSENS, GJ ^{[1
]}

MARSHALL, JM ^{[1
]}

机构：

[1] UNIV COLL WALES,DEPT MAT ENGN,SWANSEA 5A2 8PP,WALES

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.39.10196

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：10196 / 10205

页数：10

共 35 条

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[7] DISPERSIVE TRANSPORT AND RECOMBINATION LIFETIME IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
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