Uniformity of radio frequency bias voltages along conducting surfaces in a plasma

被引:22
作者
Stevens, JE
Sowa, MJ
Cecchi, JL
机构
[1] PRINCETON PLASMA PHYS LAB,PRINCETON,NJ 08544
[2] UNIV NEW MEXICO,DEPT CHEM & NUCL ENGN,ALBUQUERQUE,NM 87131
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 01期
关键词
D O I
10.1116/1.579909
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
High-density magnetic-field-free plasma sources produce plasmas that are opaque to radio frequency (rf) fields in the 0-200 MHz frequency range. Thus plasma currents from a biased substrate flow to ground along reactor surfaces. We investigate some consequences of this rf skin effect in an inductively coupled plasma source with densities of 10(11)-10(12)cm(-3) in argon. Magnetic probe measurements confirm that capacitively coupled rf fields are localized near the reactor surfaces. Electric probes were used to measure the voltage on the surface of a biased platen without a substrate. We find that the rf wavelength and phase velocity along reactor surfaces are reduced by a factor of similar to 5 compared to free space. This reduced wavelength is attributed to a surface wave which can be analyzed using a formalism similar to that for Trivelpiece-Gould modes. (C) 1996 American Vacuum Society.
引用
收藏
页码:139 / 143
页数:5
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