Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy

被引：41

作者：

Zheng, HQ ^{[1
]}

Radhakrishnan, K ^{[1
]}

Wang, H ^{[1
]}

Yuan, KH ^{[1
]}

Yoon, SF ^{[1
]}

Ng, GI ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 06期

关键词：

D O I：

10.1063/1.1306657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP/InGaAs double-heterojunction bipolar transistor (HBT) structures were grown metamorphically on GaAs substrates by solid-source molecular-beam epitaxy. A linearly graded InxGa1-xP (x varying from 0.48 to 1) buffer layer was used to accommodate the strain relaxation. The crystallinity of the buffer layer and the HBT structure was examined by x-ray diffractometry. Devices with 5 x 5 mu m(2) emitter area showed a typical peak current gain of 40, a common-emitter breakdown voltage (BVCEO) higher than 9 V, a current gain cut-off frequency (f(T)) of 46 GHz, and a maximum oscillation frequency (f(max)) of 40 GHz. (C) 2000 American Institute of Physics. [S0003-6951(00)02432-3].

引用

页码：869 / 871

页数：3

共 11 条

[1]

Cappy A, 1996, 1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, P3, DOI 10.1109/ICIPRM.1996.491919

[2] Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates [J].

Hoke, WE ;

Lemonias, PJ ;

Mosca, JJ ;

Lyman, PS ;

Torabi, A ;

Marsh, PF ;

McTaggart, RA ;

Lardizabal, SM ;

Hetzler, K .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1131-1135

[3] Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's [J].

Hwang, KC ;

Chao, PC ;

Creamer, C ;

Nichols, KB ;

Wang, S ;

Tu, D ;

Kong, W ;

Dugas, D ;

Patton, G .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (11) :551-553

[4] Measurement and comparison of 1/f noise and g-r noise in silicon homojunction and III-V heterojunction bipolar transistors [J].

Kirtania, AK ;

Das, MB ;

Chandrasekhar, S ;

Lunardi, LM ;

Qua, GJ ;

Hamm, RA ;

Yang, LW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (05) :784-792

[5] Submicron transferred-substrate heterojunction bipolar transistors [J].

Lee, Q ;

Martin, SC ;

Mensa, D ;

Smith, RP ;

Guthrie, J ;

Rodwell, MJW .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (08) :396-398

[6] Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors [J].

McAlister, SP ;

McKinnon, WR ;

Driad, R ;

Renaud, AP .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5231-5234

[7] Strain relaxation in graded composition InxGa1-xAs/GaAs buffer layers [J].

Romanato, F ;

Napolitani, E ;

Carnera, A ;

Drigo, AV ;

Lazzarini, L ;

Salviati, G ;

Ferrari, C ;

Bosacchi, A ;

Franchi, S .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) :4748-4755

[8]

VELLING P, 1999, UNPUB 11 INT C IND P, P467

[9] A 155-GHz monolithic low-noise amplifier [J].

Wang, H ;

Lai, R ;

Kok, YL ;

Huang, TW ;

Aust, MV ;

Chen, YCC ;

Siegel, PH ;

Gaier, T ;

Dengler, RJ ;

Allen, BR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1998, 46 (11) :1660-1666

[10] DC and microwave characteristics of metamorphic InP/In0.53Ga0.47As heterojunction bipolar transistors grown on GaAs substrates [J].

Wang, H ;

Ng, GI ;

Zheng, HQ ;

Chua, LH ;

Xiong, YZ .

2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS, 2000, :235-238

← 1 2 →