A 155-GHz monolithic low-noise amplifier

被引：22

作者：

Wang, H

Lai, R

Kok, YL

Huang, TW

Aust, MV

Chen, YCC

Siegel, PH

Gaier, T

Dengler, RJ

Allen, BR

机构：

[1] TRW Co Inc, Space & Technol Grp, Redondo Beach, CA 90278 USA

[2] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 11期

关键词：

InP; LNA; MMIC; pHEMT;

D O I：

10.1109/22.734551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design, fabrication, and test results of a three-stage 155-GHz monolithic low-noise amplifier (LNA) fabricated with the 0.1-mu m pseudomorphic (PM) InAlAs/InGaAs/InP HEMT technology. With this amplifier in a test fixture, a small-signal gain of 12 dB was measured at 155 GHz, and more than 10-dB gain from 151 to 156 GHz, When the amplifier was biased for a low noise figure (NF), an NF of 5.1 dB with an associated gain of 10.1 dB was achieved at 155 GHz, All the results above are referred to the monolithic-microwave integrated-circuit (MMIC) chip with the input and output waveguide-to-microstrip-line transition losses corrected.

引用

页码：1660 / 1666

页数：7

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