Room temperature plasma oxidation mechanism to obtain ultrathin silicon oxide and titanium oxide layers

被引：37

作者：

Tinoco, JC ^{[1
]}

Estrada, M ^{[1
]}

Romero, G ^{[1
]}

机构：

[1] CINVESTAV, IPN, Dept Ingn Elect, Secc Elect Estado Solido, Mexico City 07300, DF, Mexico

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 06期

关键词：

D O I：

10.1016/S0026-2714(03)00098-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scaling rules for sub-micrometric MOS devices have led to the necessity of ultrathin dielectric films and high-k dielectric layers. In this paper we present first results of room temperature plasma oxidation to obtain ultrathin layers of SiO2 and TiO2. The oxidation process in O-2 and N2O shows a power law dependence with time and inverse proportionality with pressure. The oxidation rate is inversely proportional to pressure for both high and medium resistivities substrates. An oxidation model is proposed to explain this behavior. Ellipsometric and C-V characterization show complete oxidation of titanium verifying that a dielectric layer is formed. (C) 2003 Elsevier Science Ltd. All rights reserved.

引用

页码：895 / 903

页数：9

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