Self-aligned porous silicon optical waveguides

被引：33

作者：

Arrand, HF

Benson, TM

Loni, A

Krueger, MG

Thoenissen, M

Lueth, H

机构：

[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England

[2] Def Evaluat & Res Agcy, Malvern WR14 3PS, Worcs, England

[3] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 20期

关键词：

optical waveguides; silicon;

D O I：

10.1049/el:19971144

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report a new self-aligned method for the fabrication of porous silicon optical waveguides which is simple and avoids the typical processing problems associated with the chemically-reactive nature of the porous silicon internal surface. The method is compatible with high temperature oxidation, enabling waveguides operating between visible (633 nm) and infra-red (1.3 mu m) to be fabricated.

引用

页码：1724 / 1725

页数：2

共 11 条

[1]

ARRAND H, 1996, AOSA TECHNICAL DIGES, V6, P311

[2]

BERGER MG, 1995, MATER RES SOC SYMP P, V358, P327

[3]

Bondarenko V. P., 1993, Technical Physics Letters, V19, P463

[4] LASER-DYE IMPREGNATION OF OXIDIZED POROUS SILICON ON SILICON-WAFERS [J].