Staggered vertical self-organization of stacked InAs/InAlAs quantum wires on InP(001)

被引：51

作者：

Brault, J

Gendry, M

Marty, O

Pitaval, M

Olivares, J

Grenet, G

Hollinger, G

机构：

[1] Ecole Cent Lyon, Elect Lab, LEOM, CNRS UMR 5512, F-69131 Ecully, France

[2] Univ Lyon 1, LENAC, Lab Electron, F-69622 Villeurbanne, France

[3] Inst Natl Sci Appl, UMR CNRS 5511, Phys Mat Lab, LPM, F-69621 Villeurbanne, France

来源：

APPLIED SURFACE SCIENCE | 2000年 / 162卷

关键词：

quantum wires; staggered vertical self-organization; InAs/InAlAs/InP; solid-source MBE; AFM; TEM; photoluminescence;

D O I：

10.1016/S0169-4332(00)00254-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Using atomic force microscopy (AFM) imaging, transmission electron microscopy (TEM) and photoluminescence (PL), we have studied InAs stacked islands on InP(001) versus the InAlAs spacer layer thickness (SLT). We have found that first wire-libe island shape is strongly favored by such a stacking process and second in the 10-25 nm SLT range, the wire size and height are dependent on the SLT. TEM images show off a new surprising staggered vertical island organization that can be explained by the phase separation appearing in the InAlAs spacer layers. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：584 / 589

页数：6

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