Silicon intersubband lasers

被引：14

作者：

Soref, RA ^{[1
]}

Friedman, L

Sun, G

机构：

[1] USAF, Res Lab, Sensors Directorate, Hanscom AFB, MA 01731 USA

[2] Univ Massachusetts, Dept Phys, Boston, MA 02125 USA

来源：

SUPERLATTICES AND MICROSTRUCTURES | 1998年 / 23卷 / 02期

关键词：

semiconductor lasers; silicon; germanium; quantum wells;

D O I：

10.1006/spmi.1996.0448

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The critical design issues for unipolar silicon quantum-well intersubband lasers an investigated in this paper. Group IV lasing at near-infrared and middle-infrared wavelengths is analyzed for surface-emitting and edge-emitting geometries. Calculations show feasibility of SiGe/Si and SiGeC/Si lasing. Silicon-on-insulator structures are proposed for index-guided lasers, vertical-cavity lasers and micro-cavity lasers. (C) 1998 Academic Press Limited.

引用

页码：427 / 439

页数：13

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