White light source in infrared region from InAs quantum dots grown on (001) InP substrates by droplet heteroepitaxy

被引：8

作者：

Oga, R ^{[1
]}

Lee, WS ^{[1
]}

Fujiwara, Y ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Dept Mat Sci & Engn, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期

关键词：

D O I：

10.1063/1.1585138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed extremely wide spectral range electroluminescence (EL) from InAs quantum dots (QDs) on (001) InP substrates at room temperature. The InAs QDs were grown by droplet heteroepitaxy using a low-pressure organometallic vapor phase epitaxial system. Room-temperature EL in a very wide wavelength range from 950 to 2200 nm was observed from InAs QDs embedded in InP matrix. The wide range emission indicates that the QDs have white optical gain in the infrared region at room temperature, which can be applied to efficient optical amplifiers for 1.0-1.6 mum fiber communication. (C) 2003 American Institute of Physics.

引用

页码：4546 / 4548

页数：3

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