Influence of Phase Transformation on Stress Evolution during Growth of Metal Thin Films on Silicon

被引：28

作者：

Fillon, A. ^{[1
]}

Abadias, G. ^{[1
]}

Michel, A. ^{[1
]}

Jaouen, C. ^{[1
]}

Villechaise, P. ^{[1
]}

机构：

[1] Univ Poitiers, Inst P, CNRS, Dept Phys & Mecan Mat,ENSMA,SP2MI Teleport 2, F-86962 Futuroscope, France

来源：

PHYSICAL REVIEW LETTERS | 2010年 / 104卷 / 09期

关键词：

SURFACE STRESS; SEGREGATION; MULTILAYERS; MECHANISM; MODEL;

D O I：

10.1103/PhysRevLett.104.096101

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In situ stress measurements during two-dimensional growth of low mobility metal films on amorphous Si were used to demonstrate the impact of interface reactivity and phase transformation on stress evolution. Using Mo1-xSix films as examples, the results show that the tensile stress rise, which develops after the film has become crystalline, is correlated with an increase in lateral grain size. The origin of the tensile stress is attributed to the volume change resulting from the alloy crystallization, which occurs at a concentration-dependent critical thickness.

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共 24 条

[1] In situ stress evolution during magnetron sputtering of transition metal nitride thin films [J].

Abadias, G. ;

Guerin, Ph. .

APPLIED PHYSICS LETTERS, 2008, 93 (11)

[2] STRUCTURE AND INTERNAL-STRESS IN ULTRATHIN SILVER FILMS DEPOSITED ON MGF2 AND SIO SUBSTRATES [J].

ABERMANN, R ;

KRAMER, R ;

MASER, J .

THIN SOLID FILMS, 1978, 52 (02) :215-229

[3] Investigation of the amorphous-to-crystalline transition in Mo/Si multilayers [J].

Bajt, S ;

Stearns, DG ;

Kearney, PA .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) :1017-1025

[4] INTERNAL STRESSES [J].

BUCKEL, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (04) :606-+

[5] Surface stress model for intrinsic stresses in thin films [J].

Cammarata, RC ;

Trimble, TM ;

Srolovitz, DJ .

JOURNAL OF MATERIALS RESEARCH, 2000, 15 (11) :2468-2474

[6] Origin of compressive residual stress in polycrystalline thin films [J].

Chason, E ;

Sheldon, BW ;

Freund, LB ;

Floro, JA ;

Hearne, SJ .

PHYSICAL REVIEW LETTERS, 2002, 88 (15) :4

[7] The effect of deposition rate on the intrinsic stress in copper and silver thin films [J].

Del Vecchio, A. L. ;

Spaepen, F. .

JOURNAL OF APPLIED PHYSICS, 2007, 101 (06)

[8] Measuring Ge segregation by real-time stress monitoring during Si1-xGex molecular beam epitaxy [J].

Floro, JA ;

Chason, E .

APPLIED PHYSICS LETTERS, 1996, 69 (25) :3830-3832

[9] Stress evolution in Mo/Si multilayers for high-reflectivity extreme ultraviolet mirrors [J].

Freitag, JM ;

Clemens, BM .

APPLIED PHYSICS LETTERS, 1998, 73 (01) :43-45

[10] Model for stress generated upon contact of neighboring islands on the surface of a substrate [J].

Freund, LB ;

Chason, E .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (09) :4866-4873