Short wavelength (λ=2.13 μm) intersubband luminescence from GaN/AlN quantum wells at room temperature
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Nevou, L.
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Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, FranceUniv Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
Nevou, L.
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Tchernycheva, M.
Julien, F. H.
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机构:Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
Julien, F. H.
Guillot, F.
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机构:Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
Guillot, F.
Monroy, E.
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机构:Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
Monroy, E.
机构:
[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
[2] Univ Grenoble 1, CNRS, CEA, Equipe Mixte,DRFMC,SP2M,PSC, F-38054 Grenoble 9, France
The authors report the observation of room-temperature intersubband luminescence at lambda=2.13 mu m from GaN/AlN quantum wells under optical pumping at lambda=0.98 mu m. The quantum wells are designed to exhibit three bound states in the conduction band. The emission arises from the e(3)e(2) intersubband transition. Photoluminescence excitation spectroscopy shows that the emission is only observed for p-polarized excitation at wavelengths corresponding to the e(1)e(3) intersubband transition. The measured external quantum efficiency is 10 pW/W. (c) 2007 American Institute of Physics.