Very short wavelength (λ=3.1-3.3 μm) quantum cascade lasers

被引：54

作者：

Devenson, J. ^{[1
]}

Barate, D. ^{[1
]}

Cathabard, O. ^{[1
]}

Teissier, R. ^{[1
]}

Baranov, A. N. ^{[1
]}

机构：

[1] Univ Montpellier 2, CNRS, UMR 5507, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 19期

关键词：

D O I：

10.1063/1.2387473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Quantum cascade lasers emitting at wavelengths as short as 3.1-3.3 mu m are reported. Such high intersubband emission energies (up to 400 meV) have been obtained thanks to the high conduction band offset of the InAs/AlSb material system. The structures, grown by molecular beam epitaxy on InAs substrates, are based on the bound-to-continuum design and use a low loss plasmon enhanced waveguide consisting of n(+)-InAs cladding layers with InAs/AlSb superlattice spacers surrounding the active zone. The lasers exhibit threshold current densities close to 3 kA/cm(2) at 83 K and operate in pulsed mode up to 240 K. (c) 2006 American Institute of Physics.

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共 10 条

[1] Short wavelength intersubband emission from InAs/AlSb quantum cascade structures [J].

Barate, D ;

Teissier, R ;

Wang, Y ;

Baranov, AN .

APPLIED PHYSICS LETTERS, 2005, 87 (05)

[2] QUANTUM CASCADE LASER [J].

FAIST, J ;

CAPASSO, F ;

SIVCO, DL ;

SIRTORI, C ;

HUTCHINSON, AL ;

CHO, AY .

SCIENCE, 1994, 264 (5158) :553-556

[3] Short wavelength (λ∼3.4 μm) quantum cascade laser based on strained compensated InGaAs/AlInAs [J].

Faist, J ;

Capasso, F ;

Sivco, DL ;

Hutchinson, AL ;

Chu, SNG ;

Cho, AY .

APPLIED PHYSICS LETTERS, 1998, 72 (06) :680-682

[4] InGaAs-AlAsSb quantum cascade structures emitting at 3.1 μm [J].

Revin, DG ;

Steer, M ;

Wilson, LR ;

Airey, RJ ;

Cockburn, JW ;

Zibik, EA ;

Green, RP .

ELECTRONICS LETTERS, 2004, 40 (14) :874-875

[5] Resonant tunneling in quantum cascade lasers [J].

Sirtori, C ;

Capasso, F ;

Faist, J ;

Hutchinson, AL ;

Sivco, DL ;

Cho, AY .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1998, 34 (09) :1722-1729

[6] Low-loss Al-free waveguides for unipolar semiconductor lasers [J].

Sirtori, C ;

Kruck, P ;

Barbieri, S ;

Page, H ;

Nagle, J ;

Beck, M ;

Faist, J ;

Oesterle, U .

APPLIED PHYSICS LETTERS, 1999, 75 (25) :3911-3913

[7] Room temperature operation of InAs/AlSb quantum cascade lasers [J].

Teissier, R ;

Barate, D ;

Vicet, A ;

Alibert, C ;

Baranov, AN ;

Marcadet, X ;

Renard, C ;

Garcia, M ;

Sirtori, C ;

Revin, D ;

Cockburn, J .

APPLIED PHYSICS LETTERS, 2004, 85 (02) :167-169

[8] Band parameters for III-V compound semiconductors and their alloys [J].

Vurgaftman, I ;

Meyer, JR ;

Ram-Mohan, LR .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :5815-5875

[9] Room-temperature short-wavelength (λ∼3.7-3.9 μm) GaInAs/AlAsSb quantum-cascade lasers -: art. no. 121127 [J].

Yang, QK ;

Manz, C ;

Bronner, W ;

Köhler, K ;

Wagner, J .

APPLIED PHYSICS LETTERS, 2006, 88 (12)

[10] Temperature dependent characteristics of λ∼3.8 μm room-temperature continuous-wave quantum-cascade lasers [J].

Yu, J. S. ;

Evans, A. ;

Slivken, S. ;

Darvish, S. R. ;

Razeghi, M. .

APPLIED PHYSICS LETTERS, 2006, 88 (25)