Room-temperature short-wavelength (λ∼3.7-3.9 μm) GaInAs/AlAsSb quantum-cascade lasers -: art. no. 121127

被引：41

作者：

Yang, QK ^{[1
]}

Manz, C ^{[1
]}

Bronner, W ^{[1
]}

Köhler, K ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 12期

关键词：

Lasers - Quantum theory - Semiconducting indium gallium arsenide - Semiconductor quantum wells - Temperature;

D O I：

10.1063/1.2190455

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We discuss the possible limitations on realizing short-wavelength GaInAs/AlAsSb quantum-cascade lasers and consequently demonstrate room-temperature (T-max=310 K) short-wavelength (lambda similar to 3.7-3.9 mu m) GaInAs/AlAsSb quantum-cascade lasers based on triple-well vertical-transition active regions. For a device with the size of 14 mu mx3.0 mm with as-cleaved facets, the maximum peak powers per facet are around 31 mW at 300 K and 17 mW at 310 K. The characteristic temperature of the laser is 170 K in the temperature range between 220 and 310 K.

引用

页数：3

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