Room-temperature intersubband emission from GaInAs-AlAsSb quantum cascade structure

被引：11

作者：

Yang, QK ^{[1
]}

Manz, C ^{[1
]}

Bronner, W ^{[1
]}

Köhler, K ^{[1
]}

Wagner, J ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, IAF, D-79108 Freiburg, Germany

来源：

ELECTRONICS LETTERS | 2004年 / 40卷 / 21期

关键词：

D O I：

10.1049/el:20046618

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature (300 K) intersubband electroluminescence has been obtained from a quantum cascade structure adopting triple-well vertical-transition active regions, based on Ga0.47In0.53As/AlAs0.56Sb0.44 heterostructures grown lattice-matched on InP substrate by molecular beam epitaxy. The emission peak wavelength varies from 4.3 mum at 77 K to 4.5 mum at 300 K.

引用

页码：1339 / 1340

页数：2

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